New Haven, Conn. -- Tso-Ping (T.P.) Ma, Raymond John Wean Professor of Electrical Engineering and chair of the Electrical Engineering Department at Yale University, has been named recipient of the 2005 IEEE (Institute of Electrical and Electronics Engineers) Andrew S. Grove Award, for his pioneering contributions to the development and understanding of CMOS gate dielectrics, the basis of today's silicon chips.
Sponsored by the IEEE Electron Devices Society, the award recognizes outstanding contributions to solid-state devices and technology. Ma will receive the award at its annual meeting on December 6, 2005 in Washington, D.C.
Ma recognized early the importance of gate tunneling current in MOS behavior, which is now recognized by the semiconductor industry as a major issue for in scaling future MOS technology.
While at Yale and as a staff engineer at the IBM Systems Products Division in East Fishkill, New York, he made significant contributions to chip technology in silicon integrated circuits increasing integrated circuit operating speed and reliability, and lowering the cost per function. He is co-author with Paul V. Dressendorfer of "Ionizing Radiation Effects in MOS Devices and Circuits," hailed widely by colleagues as the most authoritative and comprehensive work on the subject.
He is a member of the U.S. National Academy of Engineering and a Fellow of the IEEE, Ma has received the IEEE Electron Devices Society's Paul Rappaport Award and was general chairman of the IEEE Semiconductor Interface Specialists Conference and the International Symposium on VLSI Technology, Systems and Applications.
He received his bachelor's degree in science from the National Taiwan University in Taipei, Taiwan, and master's and doctoral degrees in engineering and applied science from Yale University.
Source: Eurekalert & othersLast reviewed: By John M. Grohol, Psy.D. on 21 Feb 2009
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